Product Datasheet Search Results:
4 Pages, 120 KB, Scan- TIM1213-15
- Toshiba America Electronic Components, Inc.
- RF POWER, FET
8 Pages, 434 KB, Scan- TIM1213-15L
- Toshiba America Electronic Components, Inc.
- KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
Product Details Search Results:
Toshiba.co.jp/TIM1213-15
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, 2-11C1B, 2 PIN","Terminal Form":"FLAT","Package Style":"FLANGE MOUNT","Terminal Position":"DUAL","Transistor Type":"RF POWER","Package Shape":"RECTANGULAR","Number of Terminals":"2","Surface Mount":"Yes"}...
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Toshiba.co.jp/TIM1213-15L
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"2-11C1B, 3 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Drain Current-Max (ID)":"11.5 A","Transistor Element Material":"GALLIUM ARSENIDE","Highest Frequency Band":"KU BAND","Number of Elements":"1","Case Connection":"SOURCE","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transis...
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Toshiba.co.jp/TIM1213-15L/GD
{"Category":"JFET","Maximum Drain Source Voltage":"15 V","Description":"Value","Maximum Continuous Drain Current":"11500 mA","Maximum Gate Source Voltage":"-5 V","Mounting":"Screw","Package":"32-11C1B","Operating Temperature":"-65 to 175 \u00b0C","Configuration":"Single","Manufacturer":"Toshiba"}...
1146 Bytes - 15:05:04, 17 March 2025
