Product Datasheet Search Results:
- TIM1213-10
- Toshiba America Electronic Components, Inc.
- KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
- TIM1213-10L
- Toshiba America Electronic Components, Inc.
- KU BAND, GaAs, N-CHANNEL, RF POWER, JFET
- TIM1213-10
- Toshiba
- Internally Matched Power GaAs FET (X, Ku-Band)
- TIM1213-10L
- Toshiba
- MICROWAVE POWER GaAs FET
Product Details Search Results:
Toshiba.co.jp/TIM1213-10
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"2-11C1B, 3 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Drain Current-Max (ID)":"11.5 A","Transistor Element Material":"GALLIUM ARSENIDE","Highest Frequency Band":"KU BAND","Number of Elements":"1","Case Connection":"SOURCE","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","T...
1415 Bytes - 15:05:03, 17 March 2025
Toshiba.co.jp/TIM1213-10L
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"11.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"15 V","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package Description":"HERM...
1452 Bytes - 15:05:03, 17 March 2025
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
7213-1050-0002.pdf | 0.44 | 1 | Request | |
7213-1050-0000.pdf | 0.44 | 1 | Request | |
7213-1081-0001.pdf | 0.44 | 1 | Request | |
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7213-1050-0104.pdf | 0.51 | 1 | Request | |
7213-1050-0001.pdf | 0.44 | 1 | Request |