Product Datasheet Search Results:

TIM1213-10.pdf4 Pages, 220 KB, Original
TIM1213-10
Toshiba America Electronic Components, Inc.
KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
TIM1213-10L.pdf4 Pages, 457 KB, Original
TIM1213-10.pdf4 Pages, 220 KB, Original
TIM1213-10
Toshiba
Internally Matched Power GaAs FET (X, Ku-Band)
TIM1213-10L.pdf4 Pages, 242 KB, Scan
TIM1213-10L
Toshiba
MICROWAVE POWER GaAs FET

Product Details Search Results:

Toshiba.co.jp/TIM1213-10
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"2-11C1B, 3 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Drain Current-Max (ID)":"11.5 A","Transistor Element Material":"GALLIUM ARSENIDE","Highest Frequency Band":"KU BAND","Number of Elements":"1","Case Connection":"SOURCE","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","T...
1415 Bytes - 15:05:03, 17 March 2025
Toshiba.co.jp/TIM1213-10L
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"11.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"15 V","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package Description":"HERM...
1452 Bytes - 15:05:03, 17 March 2025

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