Product Datasheet Search Results:
- SIHFP32N50K
- Vishay Presicion Group
- 32 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
- SIHFP32N50K-E3
- Vishay Presicion Group
- 32 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Product Details Search Results:
Vishay.com/SIHFP32N50K
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"450 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"32 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"130 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...
1485 Bytes - 13:27:35, 01 November 2024
Vishay.com/SIHFP32N50K-E3
{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"450 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"32 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"130 A","Channel Type":"N-CHANNEL","FET...
1556 Bytes - 13:27:35, 01 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
T2351N50K.pdf | 0.41 | 1 | Request | |
T4021N50K.pdf | 0.34 | 1 | Request | |
T3441N50K.pdf | 0.34 | 1 | Request | |
T2851N50K.pdf | 0.41 | 1 | Request | |
T1451N50K.pdf | 0.33 | 1 | Request | |
T2161N50K.pdf | 0.41 | 1 | Request | |
T1551N50K.pdf | 0.41 | 1 | Request | |
D6001N50K.pdf | 0.26 | 1 | Request |