Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"20(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-247AC","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"80 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Number of Terminals":"3","Avalanche Energy Rating (Eas)":"50 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"13 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Pac...

{"C(iss) Max. (F)":"1.3n","Absolute Max. Power Diss. (W)":"150","g(fs) Max, (S) Trans. conduct,":"11","I(D) Abs. Max.(A) Drain Curr.":"12","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"68n","r(DS)on Max. (Ohms)":"180m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"80","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"7.3","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"11","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Packag...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"180 mOhm @ 12A, 10V","FET Feature":"Standard","Product Photos":"TO-247-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"500","Supplier Device Package":"TO-247-3","Other Names":"*IRFP240","Packaging":"Tube","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"IRFP240","Power - Max":"150W","Package / Case":"TO-247-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"200...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IRFP Series Side 1 IRFP Series Side 2","Package / Case":"TO-247-3","Current - Continuous Drain (Id) @ 25\u00b0C":"20A (Tc)","Gate Charge (Qg) @ Vgs":"70nC @ 10V","Product Photos":"TO-247-3","Rds On (Max) @ Id, Vgs":"180 mOhm @ 12A, 10V","Datasheets":"IRFP240","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"25","Drain to Source Voltage (Vdss)":"200V","Online Catalog...

{"Category":"Power MOSFET","Dimensions":"15.87 x 5.31 x 20.82\n \n mm","Maximum Continuous Drain Current":"20\n \n A","Width":"5.31\n \n mm","Maximum Drain Source Voltage":"200\n \n V","Package Type":"TO-247AC","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150\n \n \u00b0C","Typical Gate Charge @ Vgs":"Maximum of 70 nC @ 10 V","Operating Temperature Range":"-55 to +150\n \n \u00b0C","Typical Turn On Delay Time":"14\n \n ns","Channel Type":"N","Typical Input Cap...