Datasheet.Directory

{"V(FM) Max.(V) Forward Voltage":"1.3","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"90","Package":"BR-3w","I(O) Max.(A) Output Current":"6.0","@Temp. (°C) (Test Condition)":"25","@Temp (°C) (Test Condition)":"50","@V(R) (V)(Test Condition)":"200","V(RRM)(V) Rep.Pk.Rev. Voltage":"200","Military":"N","I(RM) Max.(A) Reverse Current":"10u","@I(FM) (A) (Test Condition)":"3.0","I(RM) Max.(A) Pk. Rev. Current":"1.0m"}...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"30 mOhm @ 14A, 4.5V","FET Feature":"Logic Level Gate","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.5V @ 250\u00b5A","Series":"PowerTrench\u00ae","Standard Package":"800","Supplier Device Package":"TO-263AB","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"FDB6021P","Power - Max":"37W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Su...

{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"80 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","Transistor Application":"SWITCH...

{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"80 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","Transistor Application":"SWITCH...

{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"80 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","Transistor Application":"SWITCH...

{"Category":"MOSFET","Maximum Drain Source Voltage":"20 V","Typical Turn-Off Delay Time":"80 ns","Description":"Value","Maximum Continuous Drain Current":"28 A","Package":"3D2PAK","Typical Turn-On Delay Time":"13 ns","Mounting":"Surface Mount","Typical Rise Time":"10 ns","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-65 to 175 \u00b0C","RDS-on":"300@4.5V mOhm","Maximum Gate Source Voltage":"\u00b18 V","Manufacturer":"Rochester Electronics","Typical Fall Time":"50 ns"}...