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Product Details Search Results:
Infineon.com/BSM75GD120DN2
{"Gate-Emitter Leakage Current":"320 nA","Continuous Collector Current at 25 C":"103 A","Product Category":"IGBT Modules","Factory Pack Quantity":"500","Brand":"Infineon Technologies","Pd - Power Dissipation":"520 W","Collector-Emitter Saturation Voltage":"2.5 V","Collector- Emitter Voltage VCEO Max":"1200 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"EconoPACK 3A","Configuration":"Hex","Maximum O...
1605 Bytes - 14:34:19, 14 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSM75GD120DN2.pdf | 0.18 | 1 | Request |
