Product Datasheet Search Results:

2N6769.pdf3 Pages, 297 KB, Original
2N6769
Central Semiconductor
NPN EPOXY Transistors
2N6769.pdf5 Pages, 138 KB, Scan
2N6769
Fairchild Semiconductor
N-Channel Power MOSFETs, 12A, 450V/500V
2N6769.pdf19 Pages, 625 KB, Original
2N6769
Motorola / Freescale Semiconductor
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39
2N6769.pdf4 Pages, 142 KB, Scan
2N6769
Harris Semiconductor
Power MOSFET Data Book 1990
2N6769.pdf1 Pages, 109 KB, Scan
2N6769
International Rectifier
TO-3 N-Channel HEXFETs
2N6769.pdf1 Pages, 49 KB, Scan
2N6769
Ixys Corporation
HIGH VOLTAGE POWER MOSFET DIE
2N6769.pdf1 Pages, 106 KB, Scan
2N6769
N/a
Shortform IC and Component Datasheets (Plus Cross Reference Data)
2N6769.pdf1 Pages, 35 KB, Original
2N6769
National Semiconductor
N-Channel Power MOSFETs
2N6769.pdf1 Pages, 55 KB, Scan
2N6769
Semelab Plc.
11 A, 450 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
2N6769R1.pdf1 Pages, 55 KB, Scan
2N6769R1
Semelab Plc.
11 A, 450 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
2N6769.pdf1 Pages, 152 KB, Scan
2N6769
Semiconductor Technology, Inc.
High Voltage MOS Power Field Effect Transistors

Product Details Search Results:

Semelab.co.uk/2N6769
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"6 ohm","Number of Terminals":"2","DS Brea...
1233 Bytes - 18:38:56, 28 March 2025
Semelab.co.uk/2N6769R1
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance...
1293 Bytes - 18:38:56, 28 March 2025

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