Product Datasheet Search Results:
8 Pages, 308 KB, Original- BSP295
- Infineon Technologies
- MOSFET N-CH 60V 1.8A SOT223 - BSP295E6327
8 Pages, 383 KB, Original- BSP295 E6327
- Infineon Technologies
- MOSFET N-CH 60V 1.8A SOT223 - BSP295E6327
8 Pages, 289 KB, Original- BSP295E6327
- Infineon Technologies
- SIPMOS Small-Signal Transistor
8 Pages, 383 KB, Original- BSP295 E6327T
- Infineon Technologies
- MOSFET N-CH 60V 1.8A SOT223 - BSP295E6327T
8 Pages, 447 KB, Original- BSP295 H6327
- Infineon Technologies Ag
- Trans MOSFET N-CH 60V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
9 Pages, 453 KB, Original- BSP295H6327XTSA1
- Infineon Technologies
- MOSFET N-Ch 60V 1.8A SOT-223-3
8 Pages, 383 KB, Original- BSP295 L6327
- Infineon Technologies
- MOSFET N-CH 60V 1.8A SOT-223 - BSP295 L6327
8 Pages, 383 KB, Original- BSP295L6327HTSA1
- Infineon Technologies Ag
- Trans MOSFET N-CH 60V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
8 Pages, 383 KB, Original- BSP295L6327XT
- Infineon Technologies Ag
- 1.8 A, 60 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
8 Pages, 383 KB, Original- BSP295T
- Infineon Technologies
- MOSFET N-CH 60V 1.8A SOT223 - BSP295E6327T
Product Details Search Results:
Infineon.com/BSP295
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"7.2 A","Channel Type":"N-CHANNEL","China ...
1546 Bytes - 06:31:42, 13 March 2025
Infineon.com/BSP295E6327
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"300 mOhm @ 1.8A, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.8V @ 400\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT223-4","Other Names":"BSP295INCT","Packaging":"Cut Tape (CT)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSP295","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Mounting Type":"Surface...
1727 Bytes - 06:31:42, 13 March 2025
Infineon.com/BSP295E6327T
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.8V @ 400\u00b5A","Input Capacitance (Ciss) @ Vds":"368pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT223-4","Datasheets":"BSP295","Rds On (Max) @ Id, Vgs":"300 mOhm @ 1.8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Cut Tape (CT)","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Mou...
1674 Bytes - 06:31:42, 13 March 2025
Infineon.com/BSP295 H6327
{"Product Category":"MOSFET","Series":"BSP295","Brand":"Infineon Technologies","Packaging":"Reel","Part # Aliases":"BSP295H6327XTSA1","RoHS":"Details","Manufacturer":"Infineon"}...
1100 Bytes - 06:31:42, 13 March 2025
Infineon.com/BSP295H6327XTSA1
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"*","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.8V @ 400\u00b5A","Series":"SIPMOS\u00ae","Package / Case":"*","Supplier Device Package":"*","Datasheets":"BSP295","Rds On (Max) @ Id, Vgs":"300 mOhm @ 1.8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"*","Power - Max":"1.8W","Standard Package":"1","Input Capacitance (Ciss) @ Vds":"368pF @ 25V","Drain to Source Voltage (Vdss)":"60V","Current - Continuous...
1597 Bytes - 06:31:42, 13 March 2025
Infineon.com/BSP295 L6327
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.8V @ 400\u00b5A","Input Capacitance (Ciss) @ Vds":"368pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT223-4","Datasheets":"BSP295","Rds On (Max) @ Id, Vgs":"300 mOhm @ 1.8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","M...
1692 Bytes - 06:31:42, 13 March 2025
Infineon.com/BSP295L6327HTSA1
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"1.8(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"60(V)","Pin Count":"3 +Tab","Packaging":"Tape and Reel","Power Dissipation":"1.8(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-223","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"0.3(ohm)","Number of Elements":"1"}...
1561 Bytes - 06:31:42, 13 March 2025
Infineon.com/BSP295 L6327XT
915 Bytes - 06:31:42, 13 March 2025
Infineon.com/BSP295L6327XT
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"7.2 A","Channel Type":"N-CHANNE...
1564 Bytes - 06:31:42, 13 March 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSP295.pdf | 0.30 | 1 | Request |
