SI8900EDB-T2 5400 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From Vishay Presicion Group
Status | ACTIVE |
Channel Type | N-CHANNEL |
Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
DS Breakdown Voltage-Min | 20 V |
Drain Current-Max (ID) | 5.4 A |
Drain-source On Resistance-Max | 0.0400 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | LEAD FREE, MICRO FOOT, 10 PIN |
Number of Elements | 2 |
Number of Terminals | 10 |
Operating Mode | ENHANCEMENT |
Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR |
Package Style | GRID ARRAY |
Surface Mount | Yes |
Terminal Finish | TIN LEAD |
Terminal Form | BALL |
Terminal Position | BOTTOM |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE SMALL SIGNAL |