SI8900EDB-T2 5400 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From Vishay Presicion Group
| Status | ACTIVE |
| Channel Type | N-CHANNEL |
| Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
| DS Breakdown Voltage-Min | 20 V |
| Drain Current-Max (ID) | 5.4 A |
| Drain-source On Resistance-Max | 0.0400 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | LEAD FREE, MICRO FOOT, 10 PIN |
| Number of Elements | 2 |
| Number of Terminals | 10 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY |
| Surface Mount | Yes |
| Terminal Finish | TIN LEAD |
| Terminal Form | BALL |
| Terminal Position | BOTTOM |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE SMALL SIGNAL |
