SI2306BDS-T1-E3 MOSFET N-CH 30V 3.16A SOT23-3
From Vishay Siliconix
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 3.16A (Ta) |
| Datasheets | Si2306BDS |
| Drain to Source Voltage (Vdss) | 30V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 4.5nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 305pF @ 15V |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Other Names | SI2306BDS-T1-E3TR SI2306BDST1E3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Tape & Reel (TR) |
| Power - Max | 750mW |
| Product Photos | SOT-23-3 |
| Rds On (Max) @ Id, Vgs | 47 mOhm @ 3.5A, 10V |
| Series | TrenchFET® |
| Standard Package | 3,000 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
