SI2306BDS-T1-E3 MOSFET, N-Ch., 30 V(D-S), 0.047 Ohm @ 10 V(GS), 4 A, TO-236 (SOT-23)
From Siliconix / Vishay
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Dimensions | 3.04 x 1.4 x 1.02 mm |
| Forward Diode Voltage | 1.2 V |
| Forward Transconductance | 7 S |
| Height | 1.02 mm |
| Length | 3.04 mm |
| Maximum Continuous Drain Current | 4 A |
| Maximum Drain Source Resistance | 0.065 Ω |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.25 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-236 |
| Pin Count | 3 |
| Typical Gate Charge @ Vgs | 14 nC @ -4 V |
| Typical Turn On Delay Time | 11 ns |
| Typical TurnOff Delay Time | 25 ns |
| Width | 1.4 mm |
