PMBF170T/R
P-Channel Enhancement MOSFET

From Philips Semiconductors / NXP Semiconductors

@Freq. (Hz) (Test Condition)1M
@I(D) (A) (Test Condition)200m
@Temp (°C) (Test Condition)25
@V(DS) (V) (Test Condition)10
@V(GS) (V) (Test Condition)10
Absolute Max. Power Diss. (W)300m
C(iss) Max. (F)40p
I(D) Abs. Drain Current (A)250m
I(DM) Max (A)(@25°C)500m
I(DSS) Max. (A)1.0u
I(GSS) Max. (A)10n
MilitaryN
PackageTO-236
Thermal Resistance Junc-Amb.500
V(BR)DSS (V)60.0
V(BR)GSS (V)20.0
V(GS)th Max. (V)3.0
V(GS)th Min. (V).8
g(fs) Max, (S) Trans. conduct,200m
g(fs) Min. (S) Trans. conduct.100m
r(DS)on Max. (Ohms)5.0

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