BAV99WT/R High-Speed Center-Tapped Doubler
From Philips Semiconductors / NXP Semiconductors
@I(F) (A) (Test Condition) | 10m |
@I(FM) (A) (Test Condition) | 150m |
@I(R) (A) (Test Condition) | 1m |
@Temp. (°C) (Test Condition) | 150 |
@V(R) (V)(Test Condition) | 75 |
@t(w) (s) (Test Condition) | 1.0m |
I(FSM) Max.(A) Pk.Fwd.Sur.Cur. | 1.0 |
I(O) Max.(A) Output Current | 130m |
I(RM) Max.(A) Pk. Rev. Current | 50u |
I(RM) Max.(A) Reverse Current | 1.0u |
Package | SOT-323 |
Semiconductor Material | Silicon |
V(FM) Max.(V) Forward Voltage | 1.2 |
V(RRM)(V) Rep.Pk.Rev. Voltage | 85 |
t(rr) Max.(s) Rev.Rec. Time | 4n |