2N6660CSM4
1 A, 60 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-041BA

From Semelab Plc.

StatusACTIVE
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min60 V
Drain Current-Max (ID)1 A
Drain-source On Resistance-Max3 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionLCC3-4
Number of Elements1
Number of Terminals4
Operating ModeENHANCEMENT
Package Body MaterialUNSPECIFIED
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)3 A
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormNO LEAD
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

External links