2N6660CSM4 1 A, 60 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-041BA
From Semelab Plc.
Status | ACTIVE |
Case Connection | DRAIN |
Channel Type | N-CHANNEL |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (ID) | 1 A |
Drain-source On Resistance-Max | 3 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | LCC3-4 |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | ENHANCEMENT |
Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Pulsed Drain Current-Max (IDM) | 3 A |
Surface Mount | Yes |
Terminal Finish | NOT SPECIFIED |
Terminal Form | NO LEAD |
Terminal Position | DUAL |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |