2N6660C4A-JQRS.CVP 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From Semelab Plc.
Status | ACTIVE |
Channel Type | N-CHANNEL |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (ID) | 1 A |
Drain-source On Resistance-Max | 3 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 10 pF |
Mfr Package Description | HERMETIC SEALED PACKAGE-18 |
Number of Elements | 1 |
Number of Terminals | 18 |
Operating Mode | ENHANCEMENT |
Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR |
Package Style | CHIP CARRIER |
Power Dissipation Ambient-Max | 0.7000 W |
Surface Mount | Yes |
Terminal Form | NO LEAD |
Terminal Position | QUAD |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE SMALL SIGNAL |