NE8500100-RG-A C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
From Renesas Electronics
Status | DISCONTINUED |
Channel Type | N-CHANNEL |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 10 V |
Drain Current-Max (ID) | 1.12 A |
EU RoHS Compliant | Yes |
FET Technology | METAL SEMICONDUCTOR |
Highest Frequency Band | C BAND |
Lead Free | Yes |
Mfr Package Description | DIE |
Number of Elements | 1 |
Operating Mode | DEPLETION |
Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR |
Package Style | UNCASED CHIP |
Surface Mount | Yes |
Terminal Finish | TIN BISMUTH |
Terminal Form | NO LEAD |
Terminal Position | UPPER |
Transistor Application | AMPLIFIER |
Transistor Element Material | GALLIUM ARSENIDE |
Transistor Type | RF SMALL SIGNAL |