{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.3(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Power Dissipation":"0.83(W)","Operating Temp Range":"-65C to 150C","Package Type":"SOT-23","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2V @ 1mA","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"300mA (Ta)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT-23-3","Rds On (Max) @ Id, Vgs":"5 Ohm @ 500mA, 10V","Datasheets":"PMBF170","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packaging":"Lighter Reels 02\/Jan\/2014","Drain to Source Voltage (Vdss)":"60V","Standard Package":"1","Online Catalog":"N...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Input Capacitance (Ciss) @ Vds":"40pF @ 10V","Series":"TrenchMOS\u2122","Standard Package":"10,000","Supplier Device Package":"SOT-23 (TO-236AB)","Datasheets":"PMBF170","Rds On (Max) @ Id, Vgs":"5 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"830mW","Package \/ Case":"TO-236-3, SC-59, ...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.3(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Power Dissipation":"0.83(W)","Operating Temp Range":"-65C to 150C","Package Type":"SOT-23","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"PLASTIC PACKAGE-3","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.3000 A","Transistor Application":"SWITCHING","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIG...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.3000 A","Transistor Application":"SWITCHING","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configurat...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.3000 A","Transistor Application":"SWITCHING","Number of Elements":"1","Feedback Cap-Max (Crss)":"10 pF","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configurat...

{"C(iss) Max. (F)":"40p","Absolute Max. Power Diss. (W)":"300m","g(fs) Max, (S) Trans. conduct,":"200m","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"5.0","@V(DS) (V) (Test Condition)":"10","I(DM) Max (A)(@25°C)":"500m","I(GSS) Max. (A)":"10n","g(fs) Min. (S) Trans. conduct.":"100m","V(BR)GSS (V)":"20.0","@I(D) (A) (Test Condition)":"200m","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"3.0","V(GS)th Min. (V)":".8","Package":"TO-236","Military":"N","I(DSS) Max. (A)":"1.0u","V(BR)DSS...