BSN20BKR MOSFET 60V N-channel Trench MOSFET
From NXP Semiconductors
| Brand | NXP Semiconductors |
| Channel Mode | Enhancement |
| Configuration | Single |
| Fall Time | 5.1 ns |
| Id - Continuous Drain Current | 265 mA |
| Manufacturer | NXP |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 402 mW |
| Product Category | MOSFET |
| Qg - Gate Charge | 490 pC |
| Rds On - Drain-Source Resistance | 2.8 Ohms |
| Rise Time | 8.4 ns |
| RoHS | Details |
| Transistor Polarity | N-Channel |
| Typical Turn-Off Delay Time | 12.5 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Breakdown Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 600 mV |
