• Category: Discrete Semiconductor Products; Current - Collector (Ic) (Max): 100mA; Current - Collector Cutoff (Max): 500nA; DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V; Datasheets: MUN5211DW1, NSBC114EDxx; Family: Transistors (BJT) - Arrays, Pre-Biased; Frequency - Transition: -; Mounting Type: Surface Mount; Package / Case: 6-TSSOP, SC-88, SOT-363; Packaging: Tape & Reel (TR); Power - Max: 250mW; Resistor - Base (R1) (Ohms): 10k; Resistor - Emitter Base (R2) (Ohms): 10k; Series: -; Standard Package: 10,000; Supplier Device Package: SC-88/SC70-6/SOT-363; Transistor Type: 2 NPN - Pre-Biased (Dual); Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA; Voltage - Collector Emitter Breakdown (Max): 50V
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