BSM15GD120DN2E3224
IGBT Modules N-CH 1.2KV 25A

From Infineon Technologies

BrandInfineon Technologies
Collector- Emitter Voltage VCEO Max1200 V
Collector-Emitter Saturation Voltage2.5 V
ConfigurationHex
Continuous Collector Current at 25 C25 A
Factory Pack Quantity10
Gate-Emitter Leakage Current150 nA
ManufacturerInfineon
Maximum Gate Emitter Voltage20 V
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 40 C
Mounting StyleScrew
Package / CaseEconoPACK 2
Pd - Power Dissipation145 W
ProductIGBT Silicon Modules
Product CategoryIGBT Modules
RoHSDetails

External links