BSL211SPL6327 4.7 A, 20 V, 0.067 ohm, P-CHANNEL, Si, POWER, MOSFET
From Infineon Technologies AG
| Status | ACTIVE |
| Avalanche Energy Rating (Eas) | 26 mJ |
| Channel Type | P-CHANNEL |
| China RoHS Compliant | Yes |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 20 V |
| Drain Current-Max (ID) | 4.7 A |
| Drain-source On Resistance-Max | 0.0670 ohm |
| EU RoHS Compliant | Yes |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Lead Free | Yes |
| Mfr Package Description | ROHS COMPLIANT, PLASTIC, TSOP-6 |
| Number of Elements | 1 |
| Number of Terminals | 6 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Power Dissipation Ambient-Max | 2 W |
| Pulsed Drain Current-Max (IDM) | 18.8 A |
| Surface Mount | Yes |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
