{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Series":"-","Standard Package":"50","Supplier Device Package":"TO-220AB","Datasheets":"IXT(A,P)2N100","Rds On (Max) @ Id, Vgs":"7 Ohm @ 1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"100W","Package \/ Case":"TO-220-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"1000V (1kV)","Current - ...

{"C(iss) Max. (F)":"900p","Absolute Max. Power Diss. (W)":"75","r(DS)on Max. (Ohms)":"6.0","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.0","@(VDS) (V) (Test Condition)":"20","Package":"TO-220AB","I(DSS) Min. (A)":"200u","Military":"N","t(r) Max. (s) Rise time":"45n","V(BR)DSS (V)":"1.0k","t(f) Max. (s) Fall time.":"20n","g(fs) Min. (S) Trans. conduct.":"800m","I(D) Abs. Drain Current (A)":"2.0"}...

{"Terminal Finish":"PURE TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"8 A","Channel Type":"N-CHANNEL","FET Technol...

{"Terminal Finish":"PURE TIN","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"8 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Brea...

{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"5 A","Channel Type":"N-CHANNEL","...