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  • Category: Discrete Semiconductor Products; Current - Continuous Drain (Id) @ 25°C: 12A (Tc); Datasheets: IXF(H,T)12N100F; Drain to Source Voltage (Vdss): 1000V (1kV); FET Feature: Standard; FET Type: MOSFET N-Channel, Metal Oxide; Family: FETs - Single; Gate Charge (Qg) @ Vgs: 77nC @ 10V; Input Capacitance (Ciss) @ Vds: 2700pF @ 25V; Mounting Type: Through Hole; Package / Case: TO-3P-3 Full Pack; Packaging: Tube; Power - Max: 300W; Product Photos: IXXH50N60C3 TO-3P-3 Full Pack; Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 6A, 10V; Series: HiPerRF™; Standard Package: 30; Supplier Device Package: TO-247AD (IXFH); Vgs(th) (Max) @ Id: 5.5V @ 4mA
    642 bytes (99 words) - 13:12, 23 October 2021
  • Category: Discrete Semiconductor Products; Current - Continuous Drain (Id) @ 25°C: 12A (Tc); Datasheets: IXF(H,V)12N100P/PS; Drain to Source Voltage (Vdss): 1000V (1kV); FET Feature: Standard; FET Type: MOSFET N-Channel, Metal Oxide; Family: FETs - Single; Gate Charge (Qg) @ Vgs: 80nC @ 10V; Input Capacitance (Ciss) @ Vds: 4080pF @ 25V; Mounting Type: Through Hole; Package / Case: TO-247-3; Packaging: Tube; Power - Max: 463W; Product Photos: IXXH50N60C3; Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 6A, 10V; Series: HiPerFET™, PolarP2™; Standard Package: 30; Supplier Device Package: TO-247AD (IXFH); Vgs(th) (Max) @ Id: 5V @ 1mA
    629 bytes (95 words) - 13:12, 23 October 2021
  • Category: Discrete Semiconductor Products; Current - Continuous Drain (Id) @ 25°C: 12A (Tc); Datasheets: IXFH/IXFT(12,10)N100Q; Drain to Source Voltage (Vdss): 1000V (1kV); FET Feature: Standard; FET Type: MOSFET N-Channel, Metal Oxide; Family: FETs - Single; Gate Charge (Qg) @ Vgs: 90nC @ 10V; Input Capacitance (Ciss) @ Vds: 2900pF @ 25V; Mounting Type: Through Hole; Package / Case: TO-247-3; Packaging: Tube; Power - Max: 300W; Product Photos: IXXH50N60C3; Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 6A, 10V; Series: HiPerFET™; Standard Package: 50; Supplier Device Package: TO-247AD (IXFH); Vgs(th) (Max) @ Id: 5.5V @ 4mA
    622 bytes (92 words) - 13:12, 23 October 2021
  • Case Connection: DRAIN; Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 1000 V; Drain Current-Max (ID): 12 A; Drain-source On Resistance-Max: 1.05 ohm; EU RoHS Compliant: Yes; FET Technology: METAL-OXIDE SEMICONDUCTOR; Lead Free: Yes; Mfr Package Description: TO-247AD, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR; Package Style: FLANGE MOUNT; Pulsed Drain Current-Max (IDM): 48 A; Status: ACTIVE; Terminal Finish: NOT SPECIFIED; Terminal Form: THROUGH-HOLE; Terminal Position: SINGLE; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE POWER
    747 bytes (90 words) - 13:12, 23 October 2021
  • Avalanche Energy Rating (Eas): 1000 mJ; Case Connection: DRAIN; Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 1000 V; Drain Current-Max (ID): 12 A; Drain-source On Resistance-Max: 1.05 ohm; EU RoHS Compliant: Yes; FET Technology: METAL-OXIDE SEMICONDUCTOR; Lead Free: Yes; Mfr Package Description: PLASTIC PACKAGE-3; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR; Package Style: FLANGE MOUNT; Pulsed Drain Current-Max (IDM): 48 A; Status: ACTIVE; Terminal Finish: TIN SILVER COPPER; Terminal Form: THROUGH-HOLE; Terminal Position: SINGLE; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE POWER
    793 bytes (95 words) - 13:12, 23 October 2021
  • Avalanche Energy Rating (Eas): 750 mJ; Case Connection: DRAIN; Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 1000 V; Drain Current-Max (ID): 12 A; Drain-source On Resistance-Max: 1.05 ohm; EU RoHS Compliant: Yes; FET Technology: METAL-OXIDE SEMICONDUCTOR; Lead Free: Yes; Mfr Package Description: PLASTIC, TO-247, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR; Package Style: FLANGE MOUNT; Pulsed Drain Current-Max (IDM): 24 A; Status: ACTIVE; Terminal Finish: TIN SILVER COPPER; Terminal Form: THROUGH-HOLE; Terminal Position: SINGLE; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE POWER
    797 bytes (96 words) - 13:12, 23 October 2021
  • Case Connection: DRAIN; Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 1000 V; Drain Current-Max (ID): 12 A; Drain-source On Resistance-Max: 1.05 ohm; EU RoHS Compliant: Yes; FET Technology: METAL-OXIDE SEMICONDUCTOR; Lead Free: Yes; Mfr Package Description: TO-247AD, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR; Package Style: FLANGE MOUNT; Pulsed Drain Current-Max (IDM): 48 A; Status: ACTIVE; Terminal Finish: NOT SPECIFIED; Terminal Form: THROUGH-HOLE; Terminal Position: SINGLE; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE POWER
    747 bytes (90 words) - 13:12, 23 October 2021