MJ10016HXV NPN Darlington Transistor
From Motorola
@I(B) (A) (Test Condition) | 10 |
@I(C) (A) (Test Condition) | 50 |
@V(CE) (V) (Test Condition) | 5.0 |
Absolute Max. Power Diss. (W) | 250 |
I(C) Abs.(A) Collector Current | 50 |
I(CBO) Max. (A) | 250u |
Military | N |
Package | TO-204AE |
Semiconductor Material | Silicon |
V(BR)CEO (V) | 500 |
V(CE)sat Max.(V) | 5.0 |
h(FE) Min. Static Current Gain | 25 |
t(d) Max. (s) Delay time. | 300n |
t(f) Max. (s) Fall time. | 1.0u |
t(r) Max. (s) Rise time | 1.0u |
t(s) Max. (s) Storage time. | 2.5u |