{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Package \/ Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"52.4A (Tc)","Gate Charge (Qg) @ Vgs":"32nC @ 5V","Product Photos":"TO-220-3","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"21 mOhm @ 26.2A, 10V","Datasheets":"FQP50N06L TO220B03 Pkg Drawing","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packaging":"Tape and Box\...

{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"210 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"990 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"52.4 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"52.4(A)","Mounting":"Through Hole","Operating Temp Range":"-55C to 175C","Drain-Source On-Volt":"60(V)","Packaging":"Rail\/Tube","Power Dissipation":"121(W)","Rad Hardened":"No","Package Type":"TO-220","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...