{"Polarity":"N","Gate-Source Voltage (Max)":"10(V)","Channel Mode":"Enhancement","Power Dissipation":"194(W)","Continuous Drain Current":"84(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"80(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"LFPAK","Type":"Power MOSFET","Pin Count":"4 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.1V @ 1mA","Package \/ Case":"SC-100, SOT-669, 4-LFPAK","Current - Continuous Drain (Id) @ 25\u00b0C":"84A (Tc)","Gate Charge (Qg) @ Vgs":"44.2nC @ 5V","Product Photos":"LFPAK-4, SOT669","PCN Assembly\/Origin":"TrenchMOS Silicon Process 19\/Sep\/2014 Wafer Fab Site Transfer 15\/Dec\/2014","Rds On (Max) @ Id, Vgs":"10 mOhm @ 25A, 10V","Datasheets":"BUK9Y11-80E","FET Type":"MOSFET N-Channel, Metal Oxide","PCN...