• Avalanche Energy Rating (Eas): 400 mJ; Case Connection: DRAIN; Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 100 V; Drain Current-Max (ID): 35 A; Drain-source On Resistance-Max: 0.0250 ohm; EU RoHS Compliant: Yes; FET Technology: METAL-OXIDE SEMICONDUCTOR; Lead Free: Yes; Mfr Package Description: GREEN PACKAGE-3; Number of Elements: 1; Number of Terminals: 2; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR; Package Style: SMALL OUTLINE; Pulsed Drain Current-Max (IDM): 100 A; Status: ACTIVE; Surface Mount: Yes; Terminal Finish: MATTE TIN; Terminal Form: GULL WING; Terminal Position: SINGLE; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE POWER
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