Product Datasheet Search Results:
9 Pages, 199 KB, Original- 2N7002DWH6327
- Infineon Technologies Ag
- 300 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
10 Pages, 388 KB, Original- 2N7002DWH6327XT
- Infineon Technologies
- MOSFET N-Ch 60V 300mA SOT-363-6
10 Pages, 388 KB, Original- 2N7002DWH6327XTSA1
- Infineon Technologies
- MOSFET N-Ch 60V 300mA SOT-363-6
Product Details Search Results:
Infineon.com/2N7002DWH6327
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.5000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3000 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Applicati...
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Infineon.com/2N7002DWH6327XT
{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Qg - Gate Charge":"0.4 nC","Package / Case":"SOT-363-6","Part # Aliases":"2N7002DWH6327XTSA1 SP000917596","Fall Time":"3.1 ns","Packaging":"Reel","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Infineon Technologies","Configuration":"Dual","Maximum Operating Temperature":"+ 150 C","Manufacturer":"Infineon","Id - Continuous Drain Current":"300 mA","Rds On - Drain-...
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Infineon.com/2N7002DWH6327XTSA1
{"Product Category":"MOSFET","Series":"2N7002","Brand":"Infineon Technologies","Packaging":"Reel","RoHS":"Details","Manufacturer":"Infineon"}...
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Null/2N7002DWH6327XTSA1
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Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2N7002DW.pdf | 0.19 | 1 | Request |
